Ease of Paralleling. Maximum Ratings. TOAB. IRF IRF IRF NJ Semi-Conductors encourages customers to verify that datasheets are current. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power. Part, IRF Category, Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel. Description, A, V, Ohm, N-channel.
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Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.
B, Mar 7 8 9 10 Fig. Such statements are not binding statements about the suitability of products for a particular application.
The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Repetitive rating; pulse igf710 limited by maximum junction temperature see fig.
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B, Mar This datasheet is subject to change without notice. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please note that some Vishay documentation may still make reference to the IEC definition.
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The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such dataeheet.
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Products may be manufactured at one of several qualified locations. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. Drain Current Current regulator Same type as D.
Case Temperature td off tf tr Fig.